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PDP TRENCH IGBT
PD - 96217A
IRG6S330UPBF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
Key Parameters
VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C TJ max 330 1.80 250 150 V V A C
C
G E
G
C
E
D2Pak IRG6S330UPBF
n-channel
G Gate C Collector
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds
Max.
30 70 40 250 160 63 1.3 -40 to + 150
Units
V A
c
W W/C C
300
Thermal Resistance
RJC Junction-to-Case
d
Parameter
Typ.
---
Max.
0.8
Units
C/W
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IRG6S330UPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES V(BR)ECS VCES/TJ
Min. Typ. Max. Units
--- --- 0.29 1.25 1.43 1.80 2.38 2.10 --- -12 2.0 10 40 150 --- --- 94 86 36 39 32 120 55 37 33 159 95 --- 943 1086 --- --- --- --- --- 2.10 --- --- 5.0
Conditions
Collector-to-Emitter Breakdown Voltage 330 Emitter-to-Collector Breakdown Voltagee 30 Breakdown Voltage Temp. Coefficient --- --- ---
V VGE = 0V, ICE = 1 mA V VGE = 0V, ICE = 1 A V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A V VGE = 15V, ICE = 40A VGE = 15V, ICE = 70A
VCE(on)
Static Collector-to-Emitter Voltage --- --- 2.6 --- --- --- ---
VGE = 15V, ICE VGE = 15V, ICE = 70A, TJ = 150C V VCE = VGE, ICE = 500A
e e e = 120A e
VGE(th) VGE(th)/TJ ICES
e
Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current
IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE
Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse
--- --- --- --- --- --- --- --- --- --- --- --- --- --- 100 --- ---
--- mV/C VCE = 330V, VGE = 0V 20 VCE = 330V, VGE = 0V, TJ = 100C --- A VCE = 330V, VGE = 0V, TJ = 125C 200 VCE = 330V, VGE = 0V, TJ = 150C --- 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ns J ns nA S nC VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve IC = 25A, VCC = 196V ns RG = 10, L=200H, LS= 150nH TJ = 25C IC = 25A, VCC = 196V RG = 10, L=200H, LS= 150nH TJ = 150C VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V
ESD Cies Coes Cres LC LE
Human Body Model Machine Model Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance --- --- --- --- ---
VCC = 240V, RG= 5.1, TJ = 100C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 2275 --- 108 --- pF VCE = 30V 75 4.5 7.5 --- --- nH --- = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13
Notes: Half sine wave with duty cycle = 0.05, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%.
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IRG6S330UPBF
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
ICE (A)
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
400
400
ICE (A)
300
300
200
200
100
100
0 0 2 4 6 8 10
0 0 2 4 6 8 10
VCE (V)
VCE (V)
Fig 1. Typical Output Characteristics @ 25C
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
Fig 2. Typical Output Characteristics @ 75C
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
400
400
ICE (A)
300
200
ICE (A)
300
200
100
100
0 0 2 4 6 8 10
0 0 2 4 6 8 10
VCE (V)
VCE (V)
Fig 3. Typical Output Characteristics @ 125C
500
Fig 4. Typical Output Characteristics @ 150C
25 IC = 25A 20
400
TJ = 150C
T J = 25C
VCE (V)
ICE (A)
300
15 TJ = 25C 10 TJ = 150C
200
100
5
0 0 2 4 6 8 10 12 14 16 18 VGE (V)
0 5 10 VGE (V) 15 20
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRG6S330UPBF
80 70
300
IC, Collector Current (A)
60 50 40 30 20 10 0 0 25 50 75 100 125 150
Repetitive Peak Current (A)
200
100 ton= 2s Duty cycle = 0.1 Half Sine Wave 0 25 50 75 100 125 150 Case Temperature (C)
T C, Case Temperature (C)
Fig 7. Maximum Collector Current vs. Case Temperature
1100 1050 1000 V CC = 240V L = 220nH C = variable 100C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1100 1000
Energy per Pulse (J)
L = 220nH C = 0.4F
100C
Energy per Pulse (J)
950 900 850 800 750 700 650 600 150 160 170 180 190 200 210 220 230 IC, Peak Collector Current (A) 25C
900 800 700 600 500 195 200 205 210 215 220 225 230 235 240 VCC, Collector-to-Supply Voltage (V)
25C
Fig 9. Typical EPULSE vs. Collector Current
1400 V CC = 240V 1200
Energy per Pulse (J)
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
1000
L = 220nH t = 1s half sine
C= 0.4F
1000 C= 0.3F 800 600 400 200 25 50 75 100 125 150 TJ, Temperature (C) C= 0.2F
100
IC (A)
10 s 100 s
10
1ms
1 1 10 V CE (V) 100 1000
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
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IRG6S330UPBF
100000
VGE, Gate-to-Emitter Voltage (V)
VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + Cgc
16 14 12 10 8 6 4 2 0 IC = 25A V CES = 240V V CES = 150V V CES = 60V
10000
Capacitance (pF)
1000
Cies
100
Coes Cres
10 0 50 100 150 200
0
20
40
60
80
100
VCE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
Thermal Response ( ZthJC )
0.20
0.1
0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 C 1 2 3 3
Ri (C/W)
(sec)
0.01
Ci= i/Ri Ci= i/Ri
0.084697 0.000038 0.374206 0.001255 0.341867 0.013676
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG6S330UPBF
A
RG
DRIVER L
C
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy IC Current
0
L DUT 1K VCC
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
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IRG6S330UPBF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
UCDTADTA6IADSA$"TAXDUC GPUA8P9@A'!# 6TT@H7G@9APIAXXA!A! DIAUC@A6TT@H7GAGDI@AAGA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S A$"T 96U@A8P9@ @6SAA2A! X@@FA! GDI@AG
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ A$"T
Q6SUAIVH7@S 96U@A8P9@ QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G @6SAA2A! X@@FA! 6A2A6TT@H7GATDU@A8P9@
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG6S330UPBF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009
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